MRF9080 Datasheet, PDF (1/12 Pages) Motorola, Inc – RF POWER FIELD EFFECT TRANSISTORS

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MRF9080/D
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for GSM 900 MHz frequency band, the high gain and broadband
performance of these devices make them ideal for large–signal, common–
source amplifier applications in 26 volt base station equipment.
• Typical Performance for GSM Frequencies, 921 to 960 MHz, 26 Volts
Output Power @ P1db: 75 Watts
Power Gain @ P1db: 18.5 dB
Efficiency @ P1db: 55%
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 90 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40µ″ Nominal.
MRF9080
MRF9080R3
MRF9080SR3
MRF9080LSR3
GSM 900 MHz FREQUENCY BAND,
75 W, 26 V
LATERAL N–CHANNEL
BROADBAND RF POWER MOSFETs
CASE 465–06, STYLE 1
NI–780
MRF9080
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
CASE 465A–06, STYLE 1
NI–780S
MRF9080SR3, MRF9080LSR3
Symbol
V_DSS
V_GS
P_D
T_stg
T_J
Value
65
–0.5, +15
250
1.43
–65 to +200
200
Class
1 (Minimum)
M1 (Minimum)
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Symbol
R_θJC
Max
0.7
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 2
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MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3
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