MRF9060MR1 Datasheet, PDF (1/12 Pages) Motorola, Inc – The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF9060M/D
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies up to 1.0 GHz. The high gain and broadband performance of these devices
make them ideal for large–signal, common–source amplifier applications in
26 volt base station equipment.
• Typical Performance at 945 MHz, 26 Volts
Output Power — 60 Watts PEP
Power Gain — 18.0 dB
Efficiency — 40% (Two Tones)
IMD — –31.5 dBc
• Integrated ESD Protection
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• TO–270 Dual Lead Available in Tape and Reel. R1 Suffix = 500 Units per
24 mm, 13 inch Reel.
• TO–272 Dual Lead Available in Tape and Reel. R1 Suffix = 500 Units per
44 mm, 13 inch Reel.
MRF9060MR1
MRF9060MBR1
945 MHz, 60 W, 26 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 1265–07, STYLE 1
TO–270 DUAL LEAD
PLASTIC
MRF9060MR1
CASE 1337–01, STYLE 1
TO–272 DUAL LEAD
PLASTIC
MRF9060MBR1
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
V_DSS
V_GS
P_D
T_stg
T_J
Symbol
R_θJC
Value
65
–0.5, +15
223
1.79
–65 to +150
175
Max
0.56
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 4
 M^Mo^Oto^Tro^Ola,^RIn^Oc.^L2^A00^R2 ^{F DEVICE DATA}
MRF9060MR1 MRF9060MBR1
1