MRF9045M Datasheet, PDF (1/8 Pages) Motorola, Inc – The RF Sub-Micron MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistor
N–Channel Enhancement–Mode Lateral MOSFET
Designed for broadband commercial and industrial applications at frequen-
cies up to 1.0 GHz. The high gain and broadband performance of this device
make it ideal for large–signal, common–source amplifier applications in 28 volt
base station equipment.
• Typical Performance at 945 MHz, 28 Volts
Output Power – 45 Watts PEP
Power Gain – 18.5 dB
Efficiency – 41% (Two Tones)
IMD – –31 dBc
• Integrated ESD Protection
• Guaranteed Ruggedness @ Load VSWR = 5:1, @ 28 Vdc, 945 MHz,
45 Watts (CW) Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance
Parameters
• Moisture Sensitivity Level 3
• RF Power Plastic Surface Mount Package
• Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
Order this document
by MRF9045M/D
MRF9045M
MRF9045MR1
945 MHz, 45 W, 28 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 1265–06, STYLE 1
(TO–270)
PLASTIC
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
(1) Simulated
Symbol
VDSS
VGS
PD
Tstg
TJ
Symbol
R_θJC
Value
65
+ 15, – 0.5
156(1)
1.25(1)
– 65 to +150
150
Class
1 (Typical)
M2 (Typical)
Max
0.8(1)
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 0
©MMOotoTrOolaR, OIncL.A20R00F DEVICE DATA
MRF9045M MRF9045MR1
1