MRF9030 Datasheet, PDF (1/12 Pages) Motorola, Inc – RF POWER FIELD EFFECT TRANSISTORS

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MRF9030/D
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies up to 1.0 GHz. The high gain and broadband performance of these devices
make them ideal for large–signal, common–source amplifier applications in
26 volt base station equipment.
• Typical Two–Tone Performance at 945 MHz, 26 Volts
Output Power — 30 Watts PEP
Power Gain — 19 dB
Efficiency — 41.5%
IMD — –32.5 dBc
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
MRF9030R1
MRF9030SR1
945 MHz, 30 W, 26 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B–05, STYLE 1
NI–360
MRF9030R1
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
CASE 360C–05, STYLE 1
NI–360S
MRF9030SR1
MRF9030R1
MRF9030SR1
Symbol
V_DSS
V_GS
P_D
P_D
T_stg
T_J
MRF9030R1
MRF9030SR1
Symbol
R_θJC
Value
68
–0.5, +15
92
0.53
117
0.67
–65 to +200
200
Class
1 (Minimum)
M1 (Minimum)
Max
1.9
1.5
Unit
Vdc
Vdc
Watts
W/°C
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 2
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MRF9030R1 MRF9030SR1
1