MRF899 Datasheet, PDF (1/6 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MRF899/D
The RF Line
NPN Silicon
RF Power Transistor
Designed for 26 Volt UHF large–signal, common emitter, Class AB linear
amplifier applications in industrial and commercial FM / AM equipment operating
in the range 800 – 960 MHz.
• Specified 26 Volt, 900 MHz Characteristics
Output Power = 150 Watts (PEP)
Minimum Gain = 8.0 dB @ 900 MHz, Class AB
Minimum Efficiency = 35% @ 900 MHz, 150 Watts (PEP)
Maximum Intermodulation Distortion – 28 dBc @ 150 Watts (PEP)
• Characterized with Series Equivalent Large–Signal Parameters from 800
to 960 MHz
• Silicon Nitride Passivated
• 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR
@ 26 Vdc, and Rated Output Power
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MRF899
150 W, 900 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 375A–01, STYLE 1
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
Collector–Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 100 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0)
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
Collector Cutoff Current (VCE = 30 Vdc, VBE = 0)
ON CHARACTERISTICS
DC Current Gain (ICE = 1.0 Adc, VCE = 5.0 Vdc)
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 26 Vdc, IE = 0, f = 1.0 MHz) (1)
(1) For information only. This part is collector matched.
V(BR)CEO
V(BR)CES
V(BR)EBO
ICES
hFE
Cob
Symbol
VCEO
VCES
VEBO
IC
PD
Tstg
Symbol
R_θJC
Min
28
60
4.0
—
30
—
Value
28
60
4.0
25
230
1.33
– 65 to + 150
Max
0.75
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
Unit
°C/W
Typ
Max
Unit
37
—
Vdc
85
—
Vdc
4.9
—
Vdc
—
10
mAdc
75
120
—
75
—
pF
(continued)
REV 7
©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
MRF899
1