MRF897R Datasheet, PDF (1/6 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
Designed for 24 Volt UHF large–signal, common emitter, class–AB linear
amplifier applications in industrial and commercial FM/AM equipment operating
in the range 800– 970 MHz.
• Specified 24 Volt, 900 MHz Characteristics
Output Power = 30 Watts
Minimum Gain = 10.5 dB @ 900 MHz, class–AB
Minimum Efficiency = 30% @ 900 MHz, 30 Watts (PEP)
Maximum Intermodulation Distortion –30 dBc @ 30 Watts (PEP)
• Characterized with Series Equivalent Large–Signal Parameters from 800
to 960 MHz
• Silicon Nitride Passivated
• 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR
@ 26 Vdc, and Rated Output Power
• Gold Metalized, Emitter Ballasted for Long Life and Resistance to Metal–
Migration
• Circuit Board Photomaster Available by Ordering Document
MRF897RPHT/D from Motorola Literature Distribution.
Order this document
by MRF897R/D
MRF897R
30 W, 900 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 395B–01, STYLE 1
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
Collector–Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0)
Emitter–Base Breakdown Voltage (IE = 5 mAdc, IC = 0)
Collector Cutoff Current (VCE = 30 Vdc, VBE = 0, TC = 25°C)
ON CHARACTERISTICS
DC Current Gain (ICE = 1.0 Adc, VCE = 5 Vdc)
DYNAMIC CHARACTERISTICS
V(BR)CEO
V(BR)CES
V(BR)EBO
ICES
hFE
Output Capacitance (VCB = 24 Vdc, IE = 0, f = 1.0 MHz)
Cob
Symbol
VCEO
VCES
VEBO
IC
PD
Tstg
Symbol
R_θJC
Min
30
60
4.0
—
30
14
Value
30
60
4.0
4.0
105
0.60
– 65 to +150
Max
1.67
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
Unit
°C/W
Typ
Max
Unit
33
—
Vdc
80
—
Vdc
4.7
—
Vdc
—
10.0
mAdc
80
120
—
21
28
pF
(continued)
©MMOotoTrOolaR, OIncL.A19R95F DEVICE DATA
MRF897R
1