MRF658 Datasheet, PDF (1/6 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
Designed for 12.5 Volt UHF large–signal, common emitter, class–C amplifier
applications in industrial and commercial FM equipment operating to 520 MHz.
• Specified 12.5 Volt, 512 MHz Characteristics
Output Power = 65 Watts
Minimum Gain = 4.15 dB
Minimum Efficiency = 50%
• Characterized with Series Equivalent Large–Signal Impedance Parameters
from 400 to 520 MHz
• Built–In Matching Network for Broadband Operation
• Triple Ion Implanted for More Consistent Characteristics
• Implanted Emitter Ballast Resistors for Improved Ruggedness
• Silicon Nitride Passivated
• Capable of Surviving Load Mismatch Stress at all Phase Angles with
20:1 VSWR @ 15.5 Vdc and 2.0 dB Overdrive
Order this document
by MRF658/D
MRF658
65 W, 512 MHz
RF POWER TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0)
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0, TC = 25°C)
V(BR)CEO
V(BR)CES
V(BR)EBO
ICES
Symbol
VCEO
VCES
VEBO
IC
PD
Tstg
Symbol
R_θJC
Min
16.5
38
4.0
—
REV 7
©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
CASE 316–01, STYLE 1
Value
16.5
38
4.0
15
175
1.0
– 65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
Max
Unit
1.0
°C/W
Typ
Max
Unit
29
—
Vdc
45
—
Vdc
4.6
—
Vdc
0.1
10
mAdc
(continued)
MRF658
1