MRF653 Datasheet, PDF (1/6 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MRF653/D
The RF Line
NPN Silicon
RF Power Transistor
MRF653
Designed for 12.5 Volt UHF large–signal amplifier applications in industrial
and commercial FM equipment operating to 512 MHz.
• Specified 12.5 Volt, 512 MHz Characteristics
Output Power = 10 W
Gain = 8.0 dB (Typ)
Efficiency = 65% (Typ)
• Gold Metallized, Emitter Ballasted for Long Life and Reliability
• Capable of 20:1 VSWR Load Mismatch at 16 V Supply Voltage
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
10 W, 512 MHz
RF POWER
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
16.5
Collector–Base Voltage
VCBO
38
Emitter–Base Voltage
VEBO
4.0
Collector Current — Continuous
IC
2.75
Total Device Dissipation @ TA = 25°C
PD
44
Derate above 25°C
0.25
Vdc
Vdc
Vdc
Adc
Watts
W/°C
CASE 244–04, STYLE 1
Storage Temperature Range
Operating Junction Temperature
Tstg
– 65 to +150
°C
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R_θJC
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 20 mAdc, IB = 0)
V(BR)CEO
Collector–Emitter Breakdown Voltage (IC = 20 mAdc, VBE = 0)
V(BR)CES
Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current (VCE = 15 Vdc, VBE = 0)
ICES
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc)
hFE
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz)
Cob
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
Gpe
(VCC = 12.5 Vdc, Pout = 10 W, f = 512 MHz)
Collector Efficiency
η_c
(VCC = 12.5 Vdc, Pout = 10 W, f = 512 MHz)
Load Mismatch Stress
ψ
(VCC = 16 Vdc, f = 512 MHz, Pin (1) = 2.6 W,
VSWR = 20:1, All Phase Angles)
4.0
°C/W
Min
Typ
Max
Unit
16.5
—
38
—
4.0
—
—
—
—
Vdc
—
Vdc
—
Vdc
5.0
mAdc
20
—
120
—
—
22
28
pF
7.0
8.0
—
dB
55
65
—
%
No Degradation in Output Power
NOTE:
1. Pin = 2.0 dB over the typical input power required for 10 W output power @ 12.5 Vdc.
REV 8
©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
MRF653
1