MRF6414 Datasheet, PDF (1/6 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
The MRF6414 is designed for 26 volt UHF large signal, common emitter,
class AB linear amplifier applications.
• Specified 26 Volt, 960 MHz Characteristics
Output Power = 50 Watts
Minimum Gain = 8.5 dB @ 960 MHz, Class AB
Minimum Efficiency = 50% @ 960 MHz, 50 Watts
• Silicon Nitride Passivated
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
• Circuit Board Photomaster Available by Ordering Document
MRF6414PHT/D from Motorola Literature Distribution.
Order this document
by MRF6414/D
MRF6414
50 W, 960 MHz
RF POWER TRANSISTOR
NPN SILICON
CASE 333A– 02, STYLE 2
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector–Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 20 mAdc, IB = 0)
Collector–Base Breakdown Voltage (IC = 20 mAdc, IE = 0)
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
Collector–Emitter Leakage Current (VCE = 30 Vdc, RBE = 75 Ω)
ON CHARACTERISTICS
DC Current Gain (ICE = 1 Adc, VCE = 5 Vdc)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICER
hFE
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
Symbol
R_θJC
Min
28
65
4
—
30
Value
28
65
4
6
134
0.77
– 65 to +150
Max
1.3
Typ
Max
—
—
—
—
—
—
—
10
—
120
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
Unit
°C/W
Unit
Vdc
Vdc
Vdc
mAdc
—
©MMOotoTrOolaR, OIncL.A19R95F DEVICE DATA
MRF6414
1