MRF6401PHT Datasheet, PDF (1/4 Pages) Motorola, Inc – NPN Silicon RF Power Transistor

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
Order this document
by MRF6401PHT/D
MRF6401
PHOTOMASTER
CASE 305C–02, STYLE 1
SOE200–PILL
RF
INPUT
R4
R5
R2
R3
R6
R7
Q1
R8
+
VCC
–
TL1
TL3
C4
C3
TL10
TL4
TL2
TP1
C1
TL4
C9
C10
C5
TL6
TL5
TL11
C6
C7
TL7 C2
TL9
C8
RF
OUTPUT
DUT
TL8
C1
C2
C3
C4, C6, C7, C9
C5
C8
C10
C11
1.5 pF, ATC Chip Capacitor 100A
3.9 pF, ATC Chip Capacitor 100A
56 pF, ATC Chip Capacitor 100A
15 nF, Chip Capacitor 0805
47 pF, ATC Chip Capacitor 100A
4.7 µF, 35 V, Capacitor
10 µF, 16 V, Capacitor
100 pF, ATC Chip Capacitor 100A
Q1
R2
R3
R4
R5
R6
R7, R8
TL1 to TL11
TP1
Transistor, BCV62
470 Ω, Chip Resistor 0805
4.7 kΩ, Chip Resistor 0805
8.2 kΩ, Chip Resistor 0805
5 kΩ, SMD Potentiometer
680 Ω, Chip Resistor 0805
7.5 Ω, Chip Resistor 0805
µStrip Lines; See Photomaster
µStrip Taper; See Photomaster
Figure 1. 1600 – 2000 MHz Broadband Application Amplifier Schematic
©MMOotoTrOolaR, OIncL.A19R95F DEVICE DATA
MRF6401 PHOTOMASTER
1