MRF455 Datasheet, PDF (1/4 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MRF455/D
The RF Line
NPN Silicon
RF Power Transistor
. . . designed for power amplifier applications in industrial, commercial and
amateur radio equipment to 30 MHz.
• Specified 12.5 Volt, 30 MHz Characteristics —
Output Power = 60 Watts
Minimum Gain = 13 dB
Efficiency = 55%
MATCHING PROCEDURE
In the push–pull circuit configuration it is preferred that the transistors are
used as matched pairs to obtain optimum performance.
The matching procedure used by Motorola consists of measuring hFE at the
data sheet conditions and color coding the device to predetermined hFE ranges
within the normal hFE limits. A color dot is added to the marking on top of the cap.
Any two devices with the same color dot can be paired together to form a
matched set of units.
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VCEO
VCES
VEBO
IC
PD
Storage Temperature Range
Tstg
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Value
18
36
4.0
15
175
1.0
– 65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
Symbol
R_θJC
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 100 mAdc, IB = 0)
V(BR)CEO
18
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0)
V(BR)CES
36
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
4.0
ON CHARACTERISTICS
DC Current Gain
(IC = 5.0 Adc, VCE = 5.0 Vdc)
hFE
10
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
MRF455
60 W, 30 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 211–07, STYLE 1
Max
Unit
1.0
°C/W
Typ
Max
Unit
—
—
Vdc
—
—
Vdc
—
—
Vdc
—
150
—
—
250
pF
(continued)
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
MRF455
1