MRF426 Datasheet, PDF (1/6 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
. . . designed for high gain driver and output linear amplifier stages in 1.5 to
30 MHz HF/SSB equipment.
• Specified 28 Volt, 30 MHz Characteristics —
Output Power = 25 W (PEP)
Minimum Gain = 22 dB
Efficiency = 35%
• Intermodulation Distortion @ 25 W (PEP) —
IMD = – 30 dB (Max)
• 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
• Class A and AB Characterization
• BLX 13 Equivalent
Order this document
by MRF426/D
MRF426
25 W (PEP), 30 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 211–07, STYLE 1
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Withstand Current — 5 s
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
VCEO
VCBO
VEBO
IC
—
PD
Tstg
Symbol
R_θJC
Value
35
65
4.0
3.0
6.0
70
0.4
– 65 to +150
Max
2.5
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/°C
°C
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0)
V(BR)CEO
35
—
Collector–Base Breakdown Voltage (IC = 50 mAdc, IE = 0)
V(BR)CBO
65
—
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
V(BR)EBO
4.0
—
—
Vdc
—
Vdc
—
Vdc
Collector Cutoff Current (VCE = 28 Vdc, VBE = 0)
ICES
—
—
10
mAdc
NOTE:
(continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
MRF426
1