MRF373AR1 Datasheet, PDF (1/8 Pages) Motorola, Inc – RF POWER FIELD EFFECT TRANSISTORS

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MRF373A/D
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies from 470 to 860 MHz. The high gain and broadband performance of these
devices make them ideal for large–signal, common source amplifier applica-
tions in 28/32 volt transmitter equipment.
• Typical CW Performance at 860 MHz, 32 Volts, Narrowband Fixture
Output Power — 75 Watts
Power Gain — 18.2 dB
Efficiency — 60%
• 100% Tested for Load Mismatch Stress at All Phase Angles
with 10:1 VSWR @ 32 Vdc, 860 MHz, 75 Watts CW
• Integrated ESD Protection
• Excellent Thermal Stability
D
• Characterized with Series Equivalent Large–Signal
Impedance Parameters
• In Tape and Reel. R1 = 500 units per 32 mm, 13 inch Reel.
MRF373AR1
MRF373ASR1
470 – 860 MHz, 75 W, 32 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B–05, STYLE 1
NI–360
MRF373AR1
G
S
CASE 360C–05, STYLE 1
NI–360S
MRF373ASR1
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
MRF373AR1
MRF373ASR1
Symbol
V_DSS
V_GS
P_D
T_stg
T_J
MRF373AR1
MRF373ASR1
MRF373AR1
MRF373ASR1
Symbol
R_θJC
Value
70
– 0.5, +15
197
1.12
278
1.59
– 65 to +150
200
Class
1 (Minimum)
M2 (Minimum)
M1 (Minimum)
Max
0.89
0.63
Unit
Vdc
Vdc
Watts
W/°C
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 2
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MRF373AR1 MRF373ASR1
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