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MRF314 Datasheet, PDF (1/6 Pages) Motorola, Inc – RF POWER TRANSISTORS NPN SILICON | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistors
. . . designed primarily for wideband largeâsignal driver and output amplifier
stages in the 30 â 200 MHz frequency range.
⢠Guaranteed Performance at 150 MHz, 28 Vdc
Output Power = 30 Watts
Minimum Gain = 10 dB
⢠100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR
⢠Gold Metallization System for High Reliability Applications
Order this document
by MRF314/D
MRF314
30 W, 30 â 200 MHz
RF POWER
TRANSISTORS
NPN SILICON
MAXIMUM RATINGS
Rating
Symbol
CollectorâEmitter Voltage
CollectorâBase Voltage
EmitterâBase Voltage
Collector Current â Continuous
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
Storage Temperature Range
Tstg
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Value
35
65
4.0
3.4
82
0.47
â 65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
Symbol
RθJC
CASE 211â07, STYLE 1
Max
Unit
2.13
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorâEmitter Breakdown Voltage
(IC = 30 mAdc, IB = 0)
V(BR)CEO
35
â
â
Vdc
CollectorâEmitter Breakdown Voltage
(IC = 30 mAdc, VBE = 0)
V(BR)CES
65
â
â
Vdc
CollectorâBase Breakdown Voltage
(IC = 30 mAdc, IE = 0)
V(BR)CBO
65
â
â
Vdc
EmitterâBase Breakdown Voltage
(IE = 3.0 mAdc, IC = 0)
V(BR)EBO
4.0
â
â
Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
â
â
3.0
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 1.5 Adc, VCE = 5.0 Vdc)
hFE
20
â
80
â
NOTE:
(continued)
1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF
amplifiers.
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
MRF314
1
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