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MRF313 Datasheet, PDF (1/4 Pages) Motorola, Inc – HIGH-FREQUENCY TRANSISTOR NPN SILICON | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
High-Frequency Transistor
. . . designed for wideband amplifier, driver or oscillator applications in military,
mobile, and aircraft radio.
⢠Specified 28 Volt, 400 MHz Characteristics â
Output Power = 1.0 Watt
Power Gain = 15 dB Min
Efficiency = 45% Typ
⢠Emitter Ballast and Low Current Density for Improved MTBF
⢠Common Emitter for Improved Stability
Order this document
by MRF313/D
MRF313
1.0 W, 400 MHz
HIGHâFREQUENCY
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
CollectorâEmitter Voltage
CollectorâBase Voltage
EmitterâBase Voltage
Collector Current â Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
CollectorâEmitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
CollectorâEmitter Breakdown Voltage (IC = 5.0 mAdc, VBE = 0)
CollectorâBase Breakdown Voltage (IC = 0.1 mAdc, IE = 0)
V(BR)CEO
V(BR)CES
V(BR)CBO
EmitterâBase Breakdown Voltage (IE = 1.0 mAdc, IC = 0)
Collector Cutoff Current (VCE = 20 Vdc, IB = 0)
V(BR)EBO
ICEO
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
Symbol
RθJC
Min
30
35
35
3.0
â
CASE 305Aâ01, STYLE 1
Value
30
40
3.0
150
6.1
35
â 65 to +150
Max
28.5
Unit
Vdc
Vdc
Vdc
mAdc
Watts
mW/°C
°C
Unit
°C/W
Typ
Max
Unit
â
â
Vdc
â
â
Vdc
â
â
Vdc
â
â
Vdc
â
1.0
mAdc
(continued)
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
MRF313
1
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