MRF2628 Datasheet, PDF (1/6 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
. . . designed for 12.5 volt VHF large–signal power amplifiers in commercial and
industrial FM equipment.
• Compact .280 Stud Package
• Specified 12.5 V, 175 MHz Performance
Output Power = 15 Watts
Power Gain = 12 dB Min
Efficiency = 60% Min
• Characterized to 220 MHz
• Load Mismatch Capability at High Line and Overdrive
Order this document
by MRF2628/D
MRF2628
15 W 136 – 220 MHz
RF POWER
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Storage Temperature Range
Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 25 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 25 mAdc, VBE = 0)
Emitter–Base Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
V(BR)CEO
V(BR)CES
V(BR)EBO
ICBO
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
TJ
Symbol
R_θJC
Min
18
36
4.0
—
REV 6
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
CASE 244–04, STYLE 1
Value
18
36
4.0
2.5
40
0.23
– 65 to +150
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
Max
Unit
4.0
°C/W
Typ
Max
Unit
—
—
Vdc
—
—
Vdc
—
—
Vdc
—
1.0
mAdc
(continued)
MRF2628
1