MRF247 Datasheet, PDF (1/4 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
The MRF247 is designed for 12.5 Volt VHF large–signal amplifier applications
in industrial and commercial FM equipment operating to 175 MHz.
• Specified 12.5 Volt, 175 MHz Characteristics —
Output Power = 75 Watts
Power Gain = 7.0 dB Min
Efficiency = 55% Min
• Characterized With Series Equivalent Large–Signal Impedance Parameters
• Internal Matching Network Optimized for Minimum Gain Frequency Slope
Response Over the Range 136 to 175 MHz
• Load Mismatch Capability at Rated Pout and Supply Voltage
Order this document
by MRF247/D
MRF247
75 W, 175 MHz
CONTROLLED Q
RF POWER
TRANSISTOR
NPN SILICON
CASE 316–01, STYLE 1
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Peak
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (2)
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
Symbol
R_θJC
Value
18
36
4.0
20
250
1.43
– 65 to +150
Max
0.7
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 100 mAdc, IB = 0)
V(BR)CEO
18
—
—
Vdc
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0)
V(BR)CES
36
—
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
4.0
—
—
Vdc
(1) This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
(2) Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
REV 1
©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
MRF247
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