MRF21060 Datasheet, PDF (1/8 Pages) Motorola, Inc – RF Power Field Effect Transistors

MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
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by MRF21060/D
The RF MOSFET Line
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
2.1 to 2.2 GHz. Suitable for W - CDMA, CDMA, TDMA, GSM and multicarrier
amplifier applications.
• Typical W - CDMA Performance: 2140 MHz, 28 Volts
5 MHz Offset @ 4.096 MHz BW, 15 DTCH
Output Power — 6.0 Watts
Power Gain — 12.5 dB
Drain Efficiency — 15%
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2.11 GHz, 60 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
MRF21060R3
MRF21060SR3
2170 MHz, 60 W, 28 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF21060R3
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
CASE 465A - 06, STYLE 1
NI - 780S
MRF21060SR3
Symbol
V_DSS
V_GS
P_D
T_stg
T_J
Value
65
- 0.5, +15
180
0.98
- 65 to +150
200
Symbol
R_θJC
Value
1.02
Class
2 (Minimum)
M3 (Minimum)
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
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MRF21060R3 MRF21060SR3
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