MRF21010 Datasheet, PDF (1/8 Pages) Motorola, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
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by MRF21010/D
The RF MOSFET Line
MRF21010LR1
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
MRF21010LSR1
Designed for W- CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
• Typical W - CDMA Performance: - 45 dBc ACPR, 2140 MHz, 28 Volts,
5 MHz Offset/4.096 MHz BW, 15 DTCH
Output Power — 2.1 Watts
Power Gain — 13.5 dB
Efficiency — 21%
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR @ 28 Vdc, 2170 MHz,
10 Watts CW Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 Inch Reel.
• Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.
2170 MHz, 10 W, 28 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B - 05, STYLE 1
NI - 360
MRF21010LR1
CASE 360C - 05, STYLE 1
NI - 360S
MRF21010LSR1
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Symbol
V_DSS
V_GS
P_D
T_stg
T_J
Symbol
R_θJC
Value
65
- 0.5, +15
43.75
0.25
- 65 to +150
200
Max
5.5
Class
1 (Minimum)
M1 (Minimum)
Unit
Vdc
Vdc
W
W/°C
°C
°C
Unit
°C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 7
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MRF21010LR1 MRF21010LSR1
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