MRF20060 Datasheet, PDF (1/10 Pages) Motorola, Inc – RF POWER BROADBAND NPN BIPOLAR

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Sub–Micron Bipolar Line
RF Power Bipolar Transistors
The MRF20060 and MRF20060S are designed for broadband commercial
and industrial applications at frequencies from 1800 to 2000 MHz. The high
gain, excellent linearity and broadband performance of these devices make
them ideal for large–signal, common emitter class A and class AB amplifier
applications. These devices are suitable for frequency modulated, amplitude
modulated and multi–carrier base station RF power amplifiers.
• Guaranteed Two–tone Performance at 2000 MHz, 26 Volts
Output Power — 60 Watts (PEP)
Power Gain — 9 dB
Efficiency — 33%
Intermodulation Distortion — –30 dBc
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• S–Parameter Characterization at High Bias Levels
• Excellent Thermal Stability
• Capable of Handling 3:1 VSWR @ 26 Vdc, 2000 MHz, 60 Watts (PEP)
Output Power
• Designed for FM, TDMA, CDMA and Multi–Carrier Applications
Order this document
by MRF20060/D
MRF20060
MRF20060S
60 W, 2000 MHz
RF POWER
BROADBAND
NPN BIPOLAR
CASE 451–04, STYLE 1
(MRF20060)
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage (IB = 0 mA)
Collector–Emitter Voltage
Collector–Base Voltage
Collector–Emitter Voltage (RBE = 100 Ohm)
Base–Emitter Voltage
Collector Current – Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Rating
Thermal Resistance, Junction to Case
©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
CASE 451A–01, STYLE 1
(MRF20060S)
Symbol
VCEO
VCES
VCBO
VCER
VEB
IC
PD
Tstg
TJ
Symbol
R_θJC
Value
25
60
60
30
–3
8
250
1.43
– 65 to +150
200
Max
0.7
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
Unit
°C/W
MRF20060 MRF20060S
1