MRF19120 Datasheet, PDF (1/12 Pages) Motorola, Inc – RF POWER FIELD EFFECT TRANSISTORS

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MRF19120/D
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
MRF19120
MRF19120S
Designed for CDMA base station applications with frequencies from 1930 to
1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applica-
tions. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.
• CDMA Performance @ 1990 MHz, 26 Volts
IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13
885 kHz — –47 dBc @ 30 kHz BW
1.25 MHz — –55 dBc @ 12.5 kHz BW
2.25 MHz — –55 dBc @ 1 MHz BW
Output Power — 15 Watts (Avg.)
Power Gain — 11.7 dB
Efficiency — 16%
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency, High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 1990 MHz, 120 Watts (CW)
Output Power
• S–Parameter Characterization at High Bias Levels
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
1990 MHz, 120 W, 26 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 375D–04, STYLE 1
NI–1230
MRF19120
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
CASE 375E–03, STYLE 1
NI–1230S
MRF19120S
Symbol
V_DSS
V_GS
P_D
T_stg
T_J
Symbol
R_θJC
Value
65
–0.5, +15
389
2.22
–65 to +150
200
Class
1 (Minimum)
M3 (Minimum)
Max
0.45
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 5
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MRF19120 MRF19120S
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