MRF19045LR3 Datasheet, PDF (1/12 Pages) Motorola, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
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by MRF19045/D
The RF MOSFET Line
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
• Typical CDMA Performance @ 1960 MHz, 26 Volts, I_DQ = 550 mA
Multi - carrier CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 9.5 Watts Avg.
Power Gain — 14.9 dB
Efficiency — 23.5%
Adjacent Channel Power —
885 kHz: - 50 dBc @ 30 kHz BW
IM3 — - 37 dBc
• 100% Tested Under 2 - Carrier N - CDMA
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 1.93 GHz, 45 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
MRF19045LR3
MRF19045LSR3
1990 MHz, 45 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465E - 04, STYLE 1
NI - 400
MRF19045LR3
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
CASE 465F - 04, STYLE 1
NI - 400S
MRF19045LSR3
Symbol
V_DSS
V_GS
P_D
T_stg
T_J
Value
65
- 0.5, +15
105
0.60
- 65 to +150
200
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Symbol
R_θJC
Value (1)
1.65
Unit
°C/W
Class
2 (Minimum)
M3 (Minimum)
(1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf .
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Rev. 6
 M^Mo^Otor^To^Ola,^RIn^Oc.^L2^A00^R4 ^{F DEVICE DATA} _{For More Information On This Product,}
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MRF19045LR3 MRF19045LSR3
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