MRF187 Datasheet, PDF (1/8 Pages) Motorola, Inc – RF POWER FIELD EFFECT TRANSISTORS

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1.0 GHz. The high gain and broadband performance of
these devices make them ideal for large–signal, common source amplifier
applications in 26 volt base station equipment.
• Guaranteed Performance @ 880 MHz, 26 Volts
Output Power — 85 Watts PEP
Power Gain — 12 dB
Efficiency — 30%
Intermodulation Distortion — –28 dBc
• 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR
@ 26 Vdc, 880 MHz, 85 Watts CW
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch
Reel.
Order this document
by MRF187/D
MRF187
MRF187R3
MRF187SR3
1.0 GHz, 85 W, 26 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 465–06, STYLE 1
NI–780
MRF187
CASE 465A–06, STYLE 1
NI–780S
MRF187SR3
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage (R_GS = 1 MΩ)
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T_C ≥ 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
V_DSS
V_DGR
V_GS
I_D
P_D
T_stg
T_J
Symbol
R_θJC
Value
65
65
±20
15
250
1.43
–65 to +200
200
Max
0.70
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 4
 M^Mo^Oto^Tro^Ola,^RIn^Oc.^L2^A00^R2 ^{F DEVICE DATA}
MRF187 MRF187R3 MRF187SR3
1