MRF18030A Datasheet, PDF (1/8 Pages) Motorola, Inc – RF Power Field Effect Transistors

MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
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by MRF18030A/D
The RF MOSFET Line
RF Power Field Effect Transistors MRF18030ALR3
N - Channel Enhancement - Mode Lateral MOSFETs _{MRF18030ALSR3}
Designed for GSM and EDGE base station applications with frequencies
from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. Specified for GSM 1805 - 1880 MHz.
• Typical GSM Performance:
Power Gain - 14 dB (Typ) @ 30 Watts
Efficiency - 50% (Typ) @ 30 Watts
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 30 W Output Power
• Excellent Thermal Stability
• Low Gold Plating Thickness on Leads, 40µ″ Nominal.
• in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
1.8 - 1.88 GHz, 30 W, 26 V
GSM/GSM EDGE
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465E - 04, STYLE 1
NI - 400
MRF18030ALR3
CASE 465F - 04, STYLE 1
NI - 400S
MRF18030ALSR3
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Symbol
V_DSS
V_GS
P_D
T_stg
T_J
Symbol
R_θJC
Value
65
- 0.5, +15
83.3
0.48
- 65 to +150
200
Value
2.1
Class
2 (Minimum)
M3 (Minimum)
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Rev. 6
 M^Mo^Otor^To^Ola,^RIn^Oc.^L2^A00^R4 ^{F DEVICE DATA}
MRF18030ALR3 MRF18030ALSR3
For More Information On This Product,
Go to: www.freescale.com
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