MRF166 Datasheet, PDF (1/8 Pages) Motorola, Inc – MOSFET BROADBAND RF POWER FETs

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power
Field Effect Transistors
N–Channel Enhancement Mode MOSFETs
Designed primarily for wideband large–signal output and driver from 30 – 500
MHz.
• Low Crss — 4.5 pF @ VDS = 28 V
• MRF166C — Typical Performance at 400 MHz, 28 Vdc
Output Power = 20 W
Gain = 17 dB
Efficiency = 55%
• Optional 4–Lead Flange Package (MRF166)
• Replacement for Industry Standards such as MRF136, DV2820, BLF244,
SD1902, and ST1001
• 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
• Facilitates Manual Gain Control, ALC and Modulation Techniques
• Excellent Thermal Stability, Ideally Suited for Class A Operation
• Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
D
Order this document
by MRF166/D
MRF166
MRF166C
20 W, 500 MHz
MOSFET
BROADBAND
RF POWER FETs
CASE 211–07, STYLE 2
G
MAXIMUM RATINGS
Rating
Drain–Gate Voltage
Drain–Gate Voltage
(RGS = 1.0 MΩ)
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate Above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
S
Symbol
VDSS
VDGR
VGS
ID
PD
Tstg
TJ
Symbol
R_θJC
CASE 319–07, STYLE 3
Value
65
65
± 40
4.0
70
0.4
– 65 to 150
200
Max
2.5
Unit
Vdc
Vdc
Adc
Adc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
MRF166 MRF166C
1