MRF16030 Datasheet, PDF (1/6 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistor
Designed for 28 Volt microwave large–signal, common base, Class–C CW
amplifier applications in the range 1600 – 1640 MHz.
• Specified 28 Volt, 1.6 GHz Class–C Characteristics
Output Power = 30 Watts
Minimum Gain = 7.5 dB, @ 30 Watts
Minimum Efficiency = 40% @ 30 Watts
• Characterized with Series Equivalent Large–Signal Parameters from
1500 MHz to 1700 MHz
• Silicon Nitride Passivated
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
Order this document
by MRF16030/D
MRF16030
30 WATTS, 1.6 GHz
RF POWER TRANSISTOR
NPN SILICON
CASE 395C–01, STYLE 2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Collector–Emitter Voltage
Emitter–Base Voltage
Collector–Current
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VCES
60
VEBO
4.0
IC
4.0
PD
103
0.58
Storage Temperature Range
THERMAL CHARACTERISTICS
Tstg
– 65 to +150
Thermal Resistance — Junction to Case (1) (2)
R_θJC
1.7
(1) Thermal measurement performed using CW RF operating condition.
(2) Thermal resistance is determined under specified RF operating conditions by infrared measurement techniques.
Unit
Vdc
Vdc
Adc
Watts
°C/W
°C
°C/W
REV 3
©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
MRF16030
1