MRF154 Datasheet, PDF (1/8 Pages) Motorola, Inc – N-CHANNEL BROADBAND RF POWER MOSFET

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field Effect Transistor
N–Channel Enhancement–Mode MOSFET
Designed primarily for linear large–signal output stages in the 2.0 – 100 MHz
frequency range.
• Specified 50 Volts, 30 MHz Characteristics
Output Power = 600 Watts
Power Gain = 17 dB (Typ)
Efficiency = 45% (Typ)
Order this document
by MRF154/D
MRF154
600 W, 50 V, 80 MHz
N–CHANNEL
BROADBAND
RF POWER MOSFET
D
G
CASE 368–03, STYLE 2
S
(HOG PAC)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
Drain–Gate Voltage
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VDGO
VGS
ID
PD
125
125
± 40
60
1350
7.7
Vdc
Vdc
Vdc
Adc
Watts
W/°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Tstg
– 65 to +150
°C
TJ
200
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R_θJC
0.13
°C/W
Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 2
©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
MRF154
1