MRF1517T1 Datasheet, PDF (1/16 Pages) Motorola, Inc – The RF MOSFET Line RF POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETS

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF1517/D
The RF MOSFET Line
RF Power Field Effect Transistor
N–Channel Enhancement–Mode Lateral MOSFETs
The MRF1517T1 is designed for broadband commercial and industrial
applications at frequencies to 520 MHz. The high gain and broadband
performance of this device makes it ideal for large–signal, common source
amplifier applications in 7.5 volt portable FM equipment.
• Specified Performance @ 520 MHz, 7.5 Volts
Output Power — 8 Watts
Power Gain — 11 dB
Efficiency — 55%
D
• Characterized with Series Equivalent Large–Signal
Impedance Parameters
• Excellent Thermal Stability
• Capable of Handling 20:1 VSWR, @ 9.5 Vdc,
520 MHz, 2 dB Overdrive
• Broadband UHF/VHF Demonstration Amplifier
Information Available Upon Request
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• RF Power Plastic Surface Mount Package
• Available in Tape and Reel.
T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel.
S
MRF1517T1
520 MHz, 8 W, 7.5 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 466–02, STYLE 1
(PLD–1.5)
PLASTIC
MAXIMUM RATINGS
Rating
Drain–Source Voltage (1)
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T_C = 25°C (2)
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
(1) Not designed for 12.5 volt applications.
(2)
Calculated
based
on
the
formula
P_D
=
TJ _– TC
R_θJC
Symbol
V_DSS
V_GS
I_D
P_D
T_stg
T_J
Symbol
R_θJC
Value
25
±20
4
62.5
0.50
–65 to +150
150
Max
2
Unit
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
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MRF1517T1
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