MRF136 Datasheet, PDF (1/12 Pages) Motorola, Inc – N-CHANNEL MOS BROADBAND RF POWER FETs

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF136/D
The RF MOSFET Line
RF Power
Field-Effect Transistors
N-Channel Enhancement-Mode MOSFETs
. . . designed for wideband large–signal amplifier and oscillator applications up
to 400 MHz range, in either single ended or push–pull configuration.
• Guaranteed 28 Volt, 150 MHz Performance
MRF136
MRF136Y
Output Power = 15 Watts
Output Power = 30 Watts
Narrowband Gain = 16 dB (Typ) Broadband Gain = 14 dB (Typ)
Efficiency = 60% (Typical)
Efficiency = 54% (Typical)
• Small–Signal and Large–Signal
Characterization
• 100% Tested For Load
Mismatch At All Phase
Angles With 30:1 VSWR
MRF136
D
• Space Saving Package For
Push–Pull Circuit
Applications — MRF136Y
• Excellent Thermal Stability,
Ideally Suited For Class A
Operation
• Facilitates Manual Gain
Control, ALC and
Modulation Techniques
G
MRF136Y
S
D
MRF136
MRF136Y
15 W, 30 W, to 400 MHz
N–CHANNEL
MOS BROADBAND
RF POWER FETs
CASE 211–07, STYLE 2
MRF136
G
S
G
(FLANGE)
D
CASE 319B–02, STYLE 1
MRF136Y
MAXIMUM RATINGS
Rating
Value
Symbol
Unit
MRF136 MRF136Y
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Gate–Source Voltage
Drain Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VDGR
VGS
ID
PD
65
65
65
65
± 40
2.5
5.0
55
0.314
100
0.571
Vdc
Vdc
Vdc
Adc
Watts
W/°C
Storage Temperature Range
Operating Junction Temperature
Tstg
– 65 to +150
°C
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Max
Symbol
Unit
MRF136 MRF136Y
Thermal Resistance, Junction to Case
R_θJC
3.2
1.75
°C/W
Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
MRF136 MRF136Y
1