MRF1150MA Datasheet, PDF (1/5 Pages) Motorola, Inc – MICROWAVE POWER TRANSISTORS

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MRF1150MA/D
The RF Line
Microwave Pulse
Power Transistors
Designed for Class B and C common base amplifier applications in short
pulse TACAN, IFF, and DME transmitters.
• Guaranteed Performance @ 1090 MHz, 50 Vdc
Output Power = 150 Watts Peak
Minimum Gain = 7.8 dB
• 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
• Industry Standard Package
• Nitride Passivated
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
• Internal Input Matching for Broadband Operation
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MRF1150MA
MRF1150MB
150 W PEAK, 960 – 1215 MHz
MICROWAVE POWER
TRANSISTORS
NPN SILICON
MAXIMUM RATINGS
Rating
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Peak (1)
Total Device Dissipation @ TC = 25°C (1) (2)
Derate above 25°C
Storage Temperature Range
Symbol
VCBO
VEBO
IC
PD
Tstg
Value
70
4.0
12
583
3.33
– 65 to +150
Unit
Vdc
Vdc
Adc
Watts
W/°C
°C
CASE 332–04, STYLE 1
(MRF1150MA)
CASE 332A–03, STYLE 1
(MRF1150MB)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (3)
Symbol
Max
R_θJC
0.3
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0)
V(BR)CES
70
—
—
Vdc
Collector–Base Breakdown Voltage
(IC = 50 mAdc, IE = 0)
V(BR)CBO
70
—
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
V(BR)EBO
4.0
—
—
Vdc
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0)
ICBO
—
—
10
mAdc
ON CHARACTERISTICS
DC Current Gain (4)
(IC = 5.0 Adc, VCE = 5.0 Vdc)
hFE
10
30
—
—
NOTES:
(continued)
1. Pulse Width = 10 µs, Duty Cycle = 1%.
2. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers.
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
4. 80 µs Pulse on Tektronix 576 or equivalent.
REV 8
©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
MRF1150MA MRF1150MB
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