MRF1047T1 Datasheet, PDF (1/12 Pages) Motorola, Inc – NPN Silicon Low Noise Transistor

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NPN Silicon
Low Noise Transistor
The MRF1047T1 is fabricated utilizing Motorola’s latest 12 GHz f_τ discrete
bipolar silicon process. The minimum noise figure is 1.0 dB at V_CE = 3.0 V and
I_C = 3.0 mA. The noise performance of the MRF1047T1 at low bias makes
this device the ideal choice in high gain, low noise applications. This device
is well suited for low–voltage, low–current, front–end applications, for use in
pagers, cellular and cordless phones, and other portable wireless systems.
The MRF1047T1 has 16 emitter fingers, with self–aligned and enhanced
processing, resulting in a high f_τ, low operating current transistor with
reduced parasitics. The MRF1047T1 is fully–ion implanted with gold
metallization and nitride passivation for maximum device r
eliability, performance and uniformity.
• Low Noise Figure, NF_min = 1.0 dB (Typ) @1.0 GHz, 3.0 V and 3.0 mA
• High Current Gain–Bandwidth Product, f_τ = 12 GHz, 3.0 V @ 15 mA
• Maximum Stable Gain, 17 dB @ 1.0 GHz, 3.0 V and 10 mA
• Output Third Order Intercept, OIP₃ = 26 dBm @ 1.0 GHz 3.0 V
and 15 mA
• Fully Ion–Implanted with Gold Metallization and Nitride Passivation
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current – Continuous [Note 3]
Power Dissipation @ T_C = 75°C
Derate Linearly above T_C = 75°C at
Storage Temperature Range
Maximum Junction Temperature
V_CEO
V_CBO
V_EBO
I_C
P_D(max)
T_stg
T_J(max)
5.0
Vdc
12
Vdc
2.5
Vdc
45
mAdc
0.172
2.3
–55 to 150
W
mW/°C
°C
150
°C
NOTES: 1. Meets Human Body Model (HBM) ≤300 V and Machine Model (MM) ≤75 V.
2. ESD data available upon request.
3. For MTBF >10 years.
THERMAL CHARACTERISTIC
Characteristics
Symbol
Max
Thermal Resistance, Junction–to–Case
R_θJC
435
NOTE: To calculate the junction temperature use T_J = (P_D x R_θJC) + T_C. The case
temperature measured on collector lead adjacent to the package body.
Unit
°C/W
MRF1047T1
RF NPN
SILICON TRANSISTOR
f_τ = 12 GHz
NF_min = 1.0 dB
I_CMAX = 45 mA
V_CEO = 5.0 V
SEMICONDUCTOR
TECHNICAL DATA
Pin 1. Base
2. Emitter
3. Collector
3
1
2
PLASTIC PACKAGE
CASE 419
(SC–70, Tape & Reel Only)
ORDERING INFORMATION
Device
Marking
Package
MRF1047T1
WB
SC–70
Tape & Reel*
*3,000 Units per 8 mm, 7 inch reel.
MOTOROLA RF PRODUCTS DEVICE DATA
© Motorola, Inc. 2001
Rev 3
1