MRF1035MB Datasheet, PDF (1/4 Pages) Motorola, Inc – MICROWAVE POWER TRANSISTORS

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MRF1035MB/D
The RF Line
Microwave Pulse
Power Transistors
Designed for Class B and C common base amplifier applications in short and
long pulse TACAN, IFF, DME, and radar transmitters.
• Guaranteed Performance @ 1090 MHz, 50 Vdc
Output Power = 35 Watts Peak
Minimum Gain = 10 dB
• 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
• Industry Standard Package
• Nitride Passivated
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
• Internal Input Matching for Broadband Operation
MRF1035MB
35 W (PEAK), 960 – 1215 MHz
MICROWAVE POWER
TRANSISTORS
NPN SILICON
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCES
60
Vdc
Collector-Base Voltage
VCBO
60
Vdc
Emitter-Base Voltage
VEBO
4.0
Vdc
Collector-Current — Continuous
IC
2.0
Adc
Total Device Dissipation @ TC = 25°C (1)
PD
Derate above 25°C
35
Watts
200
mW/°C
CASE 332A–03, STYLE 1
Storage Temperature Range
Tstg
– 65 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction to Case (2)
R_θJC
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
5.0
°C/W
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 20 mAdc, VBE = 0)
V(BR)CES
60
—
—
Vdc
Collector-Base Breakdown Voltage
(IC = 20 mAdc, IE = 0)
V(BR)CBO
60
—
—
Vdc
Emitter-Base Breakdown Voltage
(IE = 2.0 mAdc, IC = 0)
V(BR)EBO
4.0
—
—
Vdc
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0)
ICBO
—
—
2.0
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 500 mAdc, VCE = 5.0 Vdc)
hFE
10
40
100
—
1. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
©MMOotTorOolaR,OIncL.A19R97F DEVICE DATA
(Replaces MRF1035MA/D)
MRF1035MB
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