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MRF1031 Datasheet, PDF (1/2 Pages) Motorola, Inc – UHF POWER TRANSISTOR | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF1031/D
The RF Line
UHF Power Transistor
. . . designed primarily for wideband, largeâsignal output and driver amplifier
stages to 1.0 GHz.
⢠Designed for Class A Linear Power Amplifiers
⢠Specified 25 Volt, 900 MHz Characteristics:
Output Power â 4.5 Watts
Power Gain â 7.0 dB Min, Class AB
⢠Gold Metallization for Improved Reliability
MRF1031
4.5 W, TO 1.0 GHz
LINEAR
UHF POWER TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Symbol
CollectorâEmitter Voltage
CollectorâBase Voltage
EmitterâBase Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
PD
Operating Junction Temperature
TJ
Storage Temperature Range
Tstg
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (TC = 70°C)
ELECTRICAL CHARACTERISTICS
Characteristic
OFF CHARACTERISTICS
CollectorâEmitter Breakdown Voltage
(IC = 20 mA, IB = 0)
CollectorâEmitter Breakdown Voltage
(IC = 20 mA, VBE = 0)
CollectorâBase Breakdown Voltage
(IC = 20 mA, IE = 0)
EmitterâBase Breakdown Voltage
(IE = 5.0 mA, IC = 0)
Collector Cutoff Current
(VCB = 25 V, IE = 0)
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mA, VCE = 5.0 V)
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 28 V, IE = 0, f = 1.0 MHz)
FUNCTIONAL TESTS
CommonâEmitter Amplifier Power Gain
(VCE = 25 V, Pout = 4.5 W, f = 900 MHz, IC = 0.6 A)
Load Mismatch
(VCE = 25 V, IC = 0.6 A, Pout = 4.5 W, f = 900 MHz,
Load VSWR = â:1, All Phase Angles)
Value
30
60
4.0
50
0.286
200
â 65 to +150
Unit
Vdc
Vdc
Vdc
Watts
W/°C
°C
°C
Symbol
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
hFE
Cob
GPE
Ï
CASE 244â04, STYLE 1
(.280 SOE)
Symbol
RθJC
Min
30
60
60
4.0
â
Max
3.5
Typ
Max
â
â
â
â
â
â
â
â
â
2.5
Unit
°C/W
Unit
Vdc
Vdc
Vdc
Vdc
mAdc
20
â
80
â
â
â
14
pF
7.0
8.0
â
dB
No Degradation in Output Power
REV 6
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
MRF1031
1
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