MRF1015MA Datasheet, PDF (1/4 Pages) Motorola, Inc – MICROWAVE POWER TRANSISTORS

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF1015MA/D
The RF Line
Microwave Pulse
Power Transistors
. . . designed for Class B and C common base amplifier applications in short
and long pulse TACAN, IFF, DME, and radar transmitters.
• Guaranteed Performance @ 1090 MHz, 50 Vdc
Output Power = 15 Watts Peak
Minimum Gain = 10 dB
• 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
• Industry Standard Package
• Nitride Passivated
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
• Internal Input Matching for Broadband Operation
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MRF1015MA
MRF1015MB
15 W (PEAK), 960 – 1215 MHz
MICROWAVE POWER
TRANSISTORS
NPN SILICON
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Symbol
Value
Unit
VCES
60
Vdc
CASE 332–04, STYLE 1
MRF1015MA
Collector–Base Voltage
Emitter–Base Voltage
VCBO
60
Vdc
VEBO
4.0
Vdc
Collector Current — Continuous
IC
Total Device Dissipation @ TC = 25°C (1)
PD
Derate above 25°C
1.0
Adc
17.5
Watts
100
mW/°C
Storage Temperature Range
Tstg
– 65 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case (2)
R_θJC
10
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
CASE 332A–03, STYLE 1
MRF1015MB
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mAdc, VBE = 0)
V(BR)CES
60
—
—
Vdc
Collector–Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
60
—
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 1.0 mAdc, IC = 0)
V(BR)EBO
4.0
—
—
Vdc
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0)
ICBO
—
—
1.0
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 250 mAdc, VCE = 5.0 Vdc)
hFE
10
40
100
—
NOTES:
(continued)
1. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
REV 6
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
MRF1015MA MRF1015MB
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