MRA100035L Datasheet, PDF (1/4 Pages) Motorola, Inc – UHF POWER TRANSISTOR

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
UHF Power Transistor
Designed primarily for wideband, large–signal output and driver amplifier
stages to 1000 MHz.
• Designed for Class A Linear Power Amplifiers
• Specified 19 Volt, 1000 MHz Characteristics:
Output Power — 3.5 Watts
Power Gain — 10 dB, Small–Signal
• Built–In Matching Network for Broadband Operation
• Gold Metallization for Improved Reliability
• Diffused Ballast Resistors
Order this document
by MRA1000–3.5L/D
MRA1000-3.5L
10 dB, 1000 MHz
3.5 W
BROADBAND
UHF POWER TRANSISTOR
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating Junction Temperature
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (TC = 70°C)
ELECTRICAL CHARACTERISTICS
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 10 mA, IB = 0)
Collector–Emitter Breakdown Voltage (IC = 10 mA, VBE = 0)
Collector–Base Breakdown Voltage (IC = 10 mA, IE = 0)
Emitter–Base Breakdown Voltage (IE = 5 mA, IC = 0)
Collector Cutoff Current (VCB = 30 V, IE = 0)
.
CASE 145D–02, STYLE 1
(.380 SOE)
Symbol
VCEO
VCBO
VEBO
PD
TJ
Tstg
Symbol
R_θJC
Value
28
50
3.5
22
0.125
200
– 65 to +200
Max
8
Unit
Vdc
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
Symbol
Min
Typ
Max
Unit
V(BR)CEO
28
–
–
Vdc
V(BR)CES
50
–
–
Vdc
V(BR)CBO
50
–
–
Vdc
V(BR)EBO
3.5
–
–
Vdc
ICBO
–
–
10
mAdc
(continued)
REV 1
©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
MRA1000–3.5L
1