MRA0510-50H Datasheet, PDF (1/4 Pages) Motorola, Inc – UHF POWER TRANSISTOR

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
UHF Power Transistor
Designed primarily for wideband, large–signal output and driver amplifier
stages in the 500 to 1000 MHz frequency range.
• Designed for Class AB Linear Power Amplifiers
• Specified 28 Volt, 1000 MHz Characteristics:
Output Power — 50 Watts
Power Gain — 7 dB (Min), Class AB
• Built–In Matching Network for Broadband Operation
• Gold Metallization for Improved Reliability
• Diffused Ballast Resistors
• Hermetic Package for Military/Space Applications
Order this document
by MRA0510–50H/D
MRA0510-50H
7.0 dB, 500 – 1000 MHz
50 W
BROADBAND
UHF POWER TRANSISTOR
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating Junction Temperature
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, RF, Junction to Case (TC = 70°C)
ELECTRICAL CHARACTERISTICS
Characteristic
OFF CHARACTERISTICS (1)
Collector–Emitter Breakdown Voltage (IC = 25 mA, VBE = 0)
Collector–Base Breakdown Voltage (IC = 25 mA, IE = 0)
Emitter–Base Breakdown Voltage (IE = 5 mA, IC = 0)
Collector–Emitter Breakdown Voltage (IC = 25 mA, RBE = 1 Ω)
Collector Cutoff Current (VCB = 30 V, IE = 0)
(1) Each transistor chip measured separately.
Symbol
VCEO
VCBO
VEBO
PD
TJ
Tstg
Symbol
R_θJC
Symbol
Min
V(BR)CES
60
V(BR)CBO
60
V(BR)EBO
4
V(BR)CER
50
ICBO
–
CASE 391–03, STYLE 1
(HLP–42)
Value
30
60
4
125
0.715
200
– 65 to +200
Max
1.4
Unit
Vdc
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
Typ
Max
Unit
–
–
Vdc
–
–
Vdc
–
–
Vdc
–
–
Vdc
–
25
mAdc
(continued)
REV 1
©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
MRA0510–50H
1