MR2835S Datasheet, PDF (1/4 Pages) Motorola, Inc – OVERVOLTAGE TRANSIENT SUPPRESSOR

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MR2835S/D
™ Designer's Data Sheet
Overvoltage Transient Suppressor
MR2835S
. . . designed for applications requiring a diode with reverse avalanche characteris-
tics for use as reverse power transient suppressor.
Developed to suppress transients in the automotive system, this device operates
in reverse mode as power zener diode and will protect expensive modules such as
ignition, injection and autoblocking systems from overvoltage conditions.
• High Power Capability
• Economical
MAXIMUM RATINGS
Parameters
Symbol
Value
Unit
DC Blocking Voltage
VR
23
V
Peak Repetitive Reverse Surge Current
IRSM
A
(Time Constant = 10 ms, TC = 25°C)
62
Non Repetitive Peak Surge Current
IFSM
A
(Halfwave, Single Phase, 50 Hz)
400
Storage Temperature
Tstg
–40 to +150
°C
Maximum Operating Junction Temperature
TJ
–40 to +150
°C
THERMAL CHARACTERISTICS
Parameters
Symbol
Value
Unit
Thermal Resistance Junction to Case
R_qJC
1.0
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Instantaneous Forward Voltage (IF = 100 A) (1)
Reverse Current (VR = 20 V) (1)
Breakdown Voltage (IZ = 100 mA) (1)
Breakdown Voltage (IZ = 80 A, TC = 85°C, PW = 80 µs)
Breakdown Voltage Temperature Coefficient
Forward Voltage Temperature Coefficient (IF = 10 mA)
Symbol
VF
IR
V(BR)
V(BR)
V(BR)TC
VFTC
OVERVOLTAGE
TRANSIENT
SUPPRESSOR
24 V – 32 V
CASE 460–02
Min
Max
Unit
—
1.1
V
—
5.0
mA
24
32
V
—
40
V
—
0.09
%/°C
—
–2.0* mV/°C
MECHANICAL CHARACTERISTICS
Finish
Polarity
Weight
Maximum Temperature for Soldering
1. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2%.
* Typical
All External Surfaces are Corrosion Resistant
Cathode to Terminal
1.78 g*
260°C for 10 s Using Belt Furnace
di/dt LIMITATION
0 – 150 V
50 mF
2.0 OHMS
100 mH
MR2835S
Figure 1. Load Dump Test Circuit
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
REV 1
©^MM^oto^oto^rr^oo^ll^aa,
Power Products
Inc. 1997
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