MPS918 Datasheet, PDF (1/4 Pages) Motorola, Inc – Amplifier Transistors

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
MPS918/D
Amplifier Transistors
NPN Silicon
COLLECTOR
3
MPS918*
MPS3563
*Motorola Preferred Device
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol MPS918 MPS3563 Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
15
12
30
30
3.0
2.0
50
350
2.8
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
0.85
Watts
6.8
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction to Ambient
R_qJA(1)
357
Thermal Resistance, Junction to Case
R_qJC
147
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Unit
°C/W
°C/W
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2)
(IC = 3.0 mAdc, IB = 0)
MPS918
MPS3563
V(BR)CEO
Collector – Base Breakdown Voltage
(IC = 1.0 mAdc, IE = 0)
(IC = 100 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
MPS918
MPS3563
MPS918
MPS3563
V(BR)CBO
V(BR)EBO
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
MPS918
MPS3563
ICBO
v v ^{1. RqJA is measured with the device soldered into a typical printed circuit board.}
2. Pulse Test: Pulse Width 300 ms; Duty Cycle 1.0%.
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Min
Max
Unit
Vdc
15
—
12
—
Vdc
30
—
30
—
Vdc
3.0
—
2.0
—
nAdc
—
10
—
50
Preferred devices are Motorola recommended choices for future use and best overall value.
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
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Device
Data
1