MPS6726 Datasheet, PDF (1/4 Pages) Motorola, Inc – One Watt Amplifier Transistor

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPS6726/D
One Watt Amplifier Transistor
PNP Silicon
COLLECTOR
3
2
BASE
MPS6726
MPS6727
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
Vdc
MPS6726
–30
MPS6727
–40
Collector – Base Voltage
VCBO
Vdc
MPS6726
–40
MPS6727
–50
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VEBO
IC
PD
–5.0
Vdc
–1.0
Adc
1.0
Watts
8.0
mW/°C
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
2.5
Watts
20
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R_qJA
125
Thermal Resistance, Junction to Case
R_qJC
50
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
°C/W
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –10 mAdc, IB = 0)
MPS6726
MPS6727
Collector – Base Breakdown Voltage
(IC = –100 mAdc, IE = 0)
MPS6726
MPS6727
Emitter – Base Breakdown Voltage
(IE = –100 mAdc, IC = 0)
Collector Cutoff Current
(VCB = –40 Vdc, IE = 0)
(VCB = –50 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = –5.0 Vdc, IC = 0)
MPS6726
MPS6727
1
2
3
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
Symbol
Min
Max
Unit
V(BR)CEO
Vdc
–30
—
–40
—
V(BR)CBO
Vdc
–40
—
–50
—
V(BR)EBO –5.0
—
Vdc
ICBO
µAdc
—
–0.1
—
–0.1
IEBO
—
–0.1
µAdc
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1997
Transistors,
FETs
and
Diodes
Device
Data
1