MPS6724 Datasheet, PDF (1/6 Pages) Motorola, Inc – One Watt Darlington Transistors

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
One Watt Darlington Transistors
NPN Silicon
COLLECTOR 3
BASE
2
Order this document
by MPS6724/D
MPS6724
MPS6725
EMITTER 1
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol MPS6724 MPS6725 Unit
VCES
VCBO
VEBO
IC
PD
40
50
50
60
12
1000
1.0
8.0
Vdc
Vdc
Vdc
mAdc
Watts
mW/°C
PD
2.5
Watts
20
mW/°C
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R_qJA
125
Thermal Resistance, Junction to Case
R_qJC
50
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
°C/W
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage ⁽¹⁾
(IC = 1.0 mAdc, IB = 0)
MPS6724
MPS6725
Collector – Base Breakdown Voltage
(IC = 1.0 mAdc, IE = 0)
MPS6724
MPS6725
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
(VCB = 40 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
v v 1. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
MPS6724
MPS6725
Symbol
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
IEBO
1
2
3
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
Min
Max
Unit
Vdc
40
—
50
—
Vdc
50
—
60
—
12
—
Vdc
nAdc
—
100
—
100
—
100
nAdc
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1