MPS6714 Datasheet, PDF (1/4 Pages) Motorola, Inc – One Watt Amplifier Transistors

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPS6714/D
One Watt Amplifier Transistors
NPN Silicon
COLLECTOR
3
2
BASE
MPS6714
MPS6715
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
Vdc
MPS6714
30
MPS6715
40
Collector – Base Voltage
VCBO
Vdc
MPS6714
40
MPS6715
50
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VEBO
IC
PD
5.0
Vdc
1.0
Adc
1.0
Watts
8.0
mW/°C
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
2.5
Watts
20
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R_qJA
125
Thermal Resistance, Junction to Case
R_qJC
50
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
°C/W
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 10 mAdc, IB = 0)
MPS6714
MPS6715
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
MPS6714
MPS6715
Emitter – Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
(VCB = 50 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
v v 1. Pulse Test: Pulse Width 30 ms; Duty Cycle 2.0%.
MPS6714
MPS6715
1
2
3
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
Symbol
Min
V(BR)CEO
30
40
V(BR)CBO
40
50
V(BR)EBO
5.0
ICBO
—
—
IEBO
—
Max
Unit
Vdc
—
—
Vdc
—
—
—
Vdc
µAdc
0.1
0.1
0.1
µAdc
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1997
Transistors,
FETs
and
Diodes
Device
Data
1