MPS6601 Datasheet, PDF (1/8 Pages) Motorola, Inc – Amplifier Transistors

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPS6601/D
Amplifier Transistors
COLLECTOR
3
COLLECTOR
3
2
BASE
NPN
1
EMITTER
2
BASE
PNP
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
Vdc
MPS6601/6651
25
MPS6602/6652
40
Collector – Base Voltage
VCBO
Vdc
MPS6601/6651
25
MPS6602/6652
30
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VEBO
IC
PD
4.0
1000
625
5.0
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
Watts
12
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to
°C
+150
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R_qJA(1)
200
°C/W
Thermal Resistance, Junction to Case
R_qJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
MPS6601/6651
MPS6602/6652
Collector – Base Breakdown Voltage
(IC = 100 µAdc, IE = 0)
MPS6601/6651
MPS6602/6652
Emitter – Base Breakdown Voltage
(IE = 10 µAdc, IC = 0)
Collector Cutoff Current
(VCE = 25 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0)
Collector Cutoff Current
(VCB = 25 Vdc, IE = 0)
(VCB = 30 Vdc, IE = 0)
MPS6601/6651
MPS6602/6652
MPS6601/6651
MPS6602/6652
1. R_qJA is measured with the device soldered into a typical printed circuit board.
NPN
MPS6601
MPS6602*
PNP
MPS6651
MPS6652*
Voltage and current are negative
for PNP transistors
*Motorola Preferred Device
1
23
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Symbol
Min
V(BR)CEO
25
40
V(BR)CBO
25
40
V(BR)EBO
4.0
ICES
—
—
ICBO
—
—
Max
Unit
Vdc
—
—
Vdc
—
—
—
Vdc
µAdc
0.1
0.1
µAdc
0.1
0.1
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1996