MPS6560 Datasheet, PDF (1/4 Pages) Motorola, Inc – Audio Transistor

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Audio Transistor
NPN Silicon
Order this document
by MPS6560/D
MPS6560
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
25
Vdc
25
Vdc
5.0
Vdc
500
mAdc
625
mW
5.0
mW/°C
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
1.5
Watts
12
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient R_qJA(1)
200
°C/mW
Thermal Resistance, Junction to Case
R_qJC
83.3
°C/mW
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2)
(IC = 10 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 25 Vdc, IB = 0)
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
Emitter Cutoff Current
(VEB(off) = 4.0 Vdc, IC = 0)
v v ^{1. RqJA is measured with the device soldered into a typical printed circuit board.}
2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Symbol
Min
V(BR)CEO
25
V(BR)CBO
25
V(BR)EBO
5.0
ICES
—
ICBO
—
IEBO
—
Max
Unit
—
Vdc
—
Vdc
—
Vdc
100
nAdc
100
nAdc
100
nAdc
REV 1
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1