MPS6530 Datasheet, PDF (1/6 Pages) Motorola, Inc – Amplifier Transistor

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistor
NPN Silicon
Order this document
by MPS6530/D
MPS6530
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
40
Vdc
Collector – Base Voltage
VCBO
60
Vdc
Emitter – Base Voltage
VEBO
5.0
Vdc
Collector Current — Continuous
IC
600
mAdc
Total Device Dissipation @ TA = 25°C
PD
Derate above 25°C
625
mW
Junction Temperature
TJ, Tstg
150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R_qJA
0.2
°C/mW
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IB = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
(VCB = 40 Vdc, IE = 0, TA = 60°C)
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Symbol
Min
Max
Unit
V(BR)CEO
40
V(BR)CBO
60
V(BR)EBO
5.0
ICBO
—
—
—
Vdc
—
Vdc
—
Vdc
mAdc
0.05
2.0
REV 1
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1