MPS6520 Datasheet, PDF (1/12 Pages) Motorola, Inc – Amplifier Transistors

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPS6520/D
Amplifier Transistors
COLLECTOR 3
2
BASE
1 EMITTER
COLLECTOR 3
2
BASE
1 EMITTER
NPN
MPS6520
MPS6521*
PNP
MPS6523
Voltage and current are negative
for PNP transistors
*Motorola Preferred Device
MAXIMUM RATINGS
Rating
Symbol
NPN
PNP
Unit
Collector – Emitter Voltage
VCEO
MPS6520, MPS6521
25
MPS6523
—
Vdc
—
25
Collector – Base Voltage
VCBO
Vdc
1
MPS6520, MPS6521
40
—
2
3
MPS6523
—
25
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VEBO
IC
PD
4.0
Vdc
100
mAdc
625
mW
5.0
mW/°C
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
1.5
Watts
12
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
(Printed Circuit Board Mounting)
R_qJA
200
°C/W
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
R_qJC
83.3
Symbol
Min
°C/W
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 0.5 mAdc, IB = 0)
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
(VCB = 20 Vdc, IE = 0)
MPS6520, MPS6521
MPS6523
V(BR)CEO
25
V(BR)EBO
4.0
ICBO
—
—
—
Vdc
—
Vdc
mAdc
0.05
0.05
Preferred devices are Motorola recommended choices for future use and best overall value.
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1