MPS6507 Datasheet, PDF (1/2 Pages) Motorola, Inc – Amplifier Transistor

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPS6507/D
Amplifier Transistor
NPN Silicon
COLLECTOR
3
2
BASE
MPS6507
MAXIMUM RATINGS
1
EMITTER
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
20
Vdc
30
Vdc
3.0
Vdc
50
mAdc
625
mW
5.0
mW/°C
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
1.5
Watts
12
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient R_qJA(1)
200
°C/W
Thermal Resistance, Junction to Case
R_qJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage ⁽²⁾
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
(VCB = 15 Vdc, IE = 0, TA = 60°C)
ON CHARACTERISTICS
DC Current Gain(2)
(IC = 2.0 mAdc, VCE = 10 Vdc)
SMALL–SIGNAL CHARACTERISTICS
V(BR)CEO
20
V(BR)CBO
30
V(BR)EBO
3.0
ICBO
—
—
hFE
25
Current–Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Small–Signal Current Gain
(IC = 2.0 mAdc, VCE = 10 Vdc, f = 20 MHz)
fT
700
Cobo
—
hfe
20
v v ^{1. RqJA is measured with the device soldered into a typical printed circuit board.}
2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Typ
Max
Unit
—
—
Vdc
—
—
Vdc
—
—
Vdc
—
50
nAdc
—
1.0
mAdc
75
—
—
800
—
MHz
1.25
2.5
pF
—
—
—
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1