MPS650 Datasheet, PDF (1/4 Pages) Motorola, Inc – Amplifier Transistors

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPS650/D
Amplifier Transistors
COLLECTOR
3
COLLECTOR
3
2
BASE
NPN
1
EMITTER
2
BASE
PNP
1
EMITTER
MAXIMUM RATINGS
Rating
MPS650 MPS651
Symbol MPS750 MPS751 Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Power Dissipation @ TA = 25°C
Derate above 25°C
VCE
VCB
VEB
IC
PD
40
60
60
80
5.0
2.0
625
5.0
Vdc
Vdc
Vdc
Adc
mW
mW/°C
Total Power Dissipation @ TC = 25°C
PD
Derate above 25°C
1.5
Watt
12
mW/°C
Operating and Storage Junction
TJ, Tstg
– 55 to +150
°C
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R_qJA
200
Thermal Resistance, Junction to Case
R_qJC
83.3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
°C/W
°C/W
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 10 mAdc, IB = 0)
MPS650, MPS750
MPS651, MPS751
Collector – Base Breakdown Voltage
(IC = 100 µAdc, IE = 0 )
MPS650, MPS750
MPS651, MPS751
Emitter – Base Breakdown Voltage
(IC = 0, IE = 10 µAdc)
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 4.0 V, IC = 0)
MPS650, MPS750
MPS651, MPS751
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%.
NPN
MPS650
MPS651 ^*
PNP
MPS750
MPS751 ^*
Voltage and current are
negative for PNP transistors
*Motorola Preferred Devices
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Symbol
Min
V(BR)CEO
40
60
V(BR)CBO
60
80
V(BR)EBO
5.0
ICBO
—
—
IEBO
—
Max
Unit
Vdc
—
—
Vdc
—
—
—
Vdc
µAdc
0.1
0.1
0.1
µAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1996