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MPS4250 Datasheet, PDF (1/4 Pages) Motorola, Inc – Transistor | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Transistor
PNP Silicon
Order this document
by MPS4250/D
MPS4250
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector â Emitter Voltage
Collector â Emitter Voltage
Collector â Base Voltage
Emitter â Base Voltage
Collector Current â Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCES
VCBO
VEBO
IC
PD
â40
Vdc
â40
Vdc
â40
Vdc
â5.0
Vdc
â
mAdc
625
mW
5.0
mW/°C
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
1.5
mW
12
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
â 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
Thermal Resistance, Junction to Case
RqJC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
°C/W
Symbol
OFF CHARACTERISTICS
Collector â Emitter Breakdown Voltage
(IC = â5.0 mA)
Collector â Emitter Sustaining Voltage(1)
(IC = â5.0)
Collector â Base Breakdown Voltage
(IC = â10 mA)
Emitter â Base Breakdown Voltage
(IE = â10 mA)
Collector Cutoff Current
(VCB = â50 V)
(VCB = â40 V, TA = 65°C)
Emitter Cutoff Current
(VEB = â3.0 V)
1. Pulse Test: Pulse Width = 300 ms; Duty Cycle = 2.0%.
V(BR)CES
V(BR)CEO(sus)
V(BR)CBO
V(BR)EBO
ICBO
IEBO
1
2
3
CASE 29â04, STYLE 1
TOâ92 (TOâ226AA)
Min
Max
Unit
â40
â
Vdc
â40
â
Vdc
â40
â
Vdc
â5.0
â
Vdc
â
â10
nA
â
â3.0
mA
â
â20
nA
©MMotootorroollaa,
SmallâSignal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1
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