MPS4125 Datasheet, PDF (1/4 Pages) Motorola, Inc – Amplifier Transistors

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPS4125/D
Amplifier Transistors
PNP Silicon
COLLECTOR
3
2
BASE
MPS4125
MPS4126
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol MPS4125 MPS4126 Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Power Dissipation @ TA = 25°C
Derate above 25°C
VCE
VCB
VEB
IC
PD
–30
–25
–10
–25
–4.0
–200
625
5.0
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Power Dissipation @ TC = 25°C
PD
Derate above 25°C
1.5
W
12
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R_qJA
200
Thermal Resistance, Junction to Case
R_qJC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
°C/W
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –1.0 mA, IB = 0)
Collector – Base Breakdown Voltage
(IC = –10 mA, IE = 0)
Emitter – Base Breakdown Voltage (IC = 0, IE = –10 mA)
Collector Cutoff Current (VCB = –20 V, IE = 0)
Emitter Cutoff Current (VEB = –3.0 V, IC = 0)
MPS4125
MPS4126
MPS4125
MPS4126
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
1
23
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Min
Max
Unit
–30
—
Vdc
–25
—
–30
—
Vdc
–25
—
–4.0
—
Vdc
—
–50
nAdc
—
–50
nAdc
REV 1
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1