MPS4123 Datasheet, PDF (1/4 Pages) Motorola, Inc – Amplifier Transistors

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPS4123/D
Amplifier Transistors
NPN Silicon
MPS4123
MPS4124
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol MPS4123 MPS4124 Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Power Dissipation @ TA = 25°C
Derate above 25°C
VCE
VCB
VEB
IC
PD
30
25
40
30
5.0
200
625
5.0
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Power Dissipation @ TC = 25°C
PD
Derate above 25°C
1.5
W
12
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R_qJA
200
Thermal Resistance, Junction to Case
R_qJC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
°C/W
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 1.0 mA, IB = 0)
MPS4123
MPS4124
V(BR)CEO
Collector – Base Breakdown Voltage
(IC = 10 mA, IE = 0)
Emitter – Base Breakdown Voltage
(IC = 0, IE = 10 mA)
Collector Cutoff Current
(VCB = 20 V, IE = 0)
MPS4123
MPS4124
V(BR)CBO
V(BR)EBO
ICBO
Emitter Cutoff Current
(VEB = 3.0 V, IC = 0)
IEBO
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Min
Max
Unit
30
—
Vdc
25
—
40
—
Vdc
30
—
5.0
—
Vdc
—
50
nAdc
—
50
nAdc
REV 1
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1